Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-30
2008-10-14
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S592000, C257S392000, C257S407000, C257S412000, C257SE21623
Reexamination Certificate
active
07435652
ABSTRACT:
Multiple integration schemes for manufacturing dual gate semiconductor structures are disclosed. By employing the novel integration schemes, polysilicon gate MOSFETs and high-k dielectric metal gate MOSFETs are formed on the same semiconductor substrate despite differences in the composition of the gate stack and resulting differences in the etch rates. A thin polysilicon layer is used for one type of gate electrodes and a silicon-containing layer are used for the other type of gate electrodes in these integration schemes to balance the different etch rates and to enable etching of the two different gate stacks.
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Chen Tze-chiang
Doris Bruce B.
Jagannathan Rangarajan
Yan Hongwen
Yang Qingyun
Fourson George
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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