Integration of pre-S/D anneal selective nitride/oxide...

Details Integration of pre-S/D anneal selective nitride/oxide... Integration of pre-S/D anneal selective nitride/oxide...

2005-03-04

2009-10-13

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S902000, C438S660000, C438S662000

Reexamination Certificate

active

07601575

ABSTRACT:
The present invention facilitates semiconductor device operation and fabrication by providing a cap-annealing process that improves channel electron mobility without substantially degrading PMOS transistor devices. The process uses an oxide
itride composite cap to alter the active dopant profile across the channel regions. During an annealing process, dopants migrate out of the Si/SiO2 in a channel region thereby altering the dopant profile of the channel region. This altered profile generally improves channel mobility thereby improving transistor performance and permitting smaller density designs.

REFERENCES:
patent: 5324974 (1994-06-01), Liao
patent: 5593907 (1997-01-01), Anjum et al.
patent: 5863828 (1999-01-01), Snyder
patent: 5877514 (1999-03-01), Seo
patent: 5932487 (1999-08-01), Lou et al.
patent: 6010929 (2000-01-01), Chapman
patent: 6287916 (2001-09-01), Mehta
patent: 6300205 (2001-10-01), Fulford et al.
patent: 6432805 (2002-08-01), Paton et al.
patent: 6496416 (2002-12-01), Look

Affiliated with

Also associated with

Rating

Integration of pre-S/D anneal selective nitride/oxide... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integration of pre-S/D anneal selective nitride/oxide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integration of pre-S/D anneal selective nitride/oxide... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4137588