Integration of pre-S/D anneal selective nitride/oxide...

Details Integration of pre-S/D anneal selective nitride/oxide... Integration of pre-S/D anneal selective nitride/oxide...

2005-08-16

2005-08-16

Nelms, David (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S554000, C438S559000

Reexamination Certificate

active

06930007

ABSTRACT:
The present invention facilitates semiconductor device operation and fabrication by providing a cap-annealing process that improves channel electron mobility without substantially degrading PMOS transistor devices. The process uses an oxide
itride composite-cap to alter the active dopant profile across the channel regions. During an annealing process, dopants migrate out of the Si/SiO2 in a channel region thereby altering the dopant profile of the channel region. This altered profile generally improves channel mobility thereby improving transistor performance and permitting smaller density designs.

REFERENCES:
patent: 5593907 (1997-01-01), Anjum et al.
patent: 5863828 (1999-01-01), Snyder
patent: 5877514 (1999-03-01), Seo
patent: 5932487 (1999-08-01), Lou et al.
patent: 6010929 (2000-01-01), Chapman
patent: 6496416 (2002-12-01), Look

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