Integration method of a semiconductor device having a...

Details Integration method of a semiconductor device having a... Integration method of a semiconductor device having a...

2005-09-06

2005-09-06

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S243000

Reexamination Certificate

active

06939765

ABSTRACT:
Embodiments of the invention are directed to an integrated circuit device and a method for forming the device. In some embodiments of the invention, two types of transistors are formed on a single substrate, transistors: transistors having a recessed gate, and transistors having a planer gate electrode. In other embodiments, transistors having a recessed gate are formed in multiple areas of the same substrate. Additionally, gates of the transistors in more than one region may be formed simultaneously.

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patent: 2003/0003651 (2003-01-01), Divakaruni et al.
patent: 2003/0011032 (2003-01-01), Umebayashi

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