Integration approach to form the core floating gate for...

Details Integration approach to form the core floating gate for... Integration approach to form the core floating gate for...

2007-04-11

2010-02-09

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29300

Reexamination Certificate

active

07659166

ABSTRACT:
Systems and methods are described that facilitate integrating ArF core patterning of floating gate structures in a flash memory device followed by KrF periphery gate patterning using a hard mask comprising a material such as amorphous carbon to facilitate core gate construction. The amorphous carbon hard mask can facilitate preparing such core gate structures while protecting periphery gate stacks such that the periphery stacks are ready for immediate KrF lithography upon completion of core gate formation without requiring additional resist deposition between core and periphery etches.

REFERENCES:
patent: 7018868 (2006-03-01), Yang et al.
patent: 2006/0046484 (2006-03-01), Abatchev et al.

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