integrating n-type and P-type metal gate transistors

Details integrating n-type and P-type metal gate transistors integrating n-type and P-type metal gate transistors

2005-12-06

2005-12-06

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S585000, C438S926000

Reexamination Certificate

active

06972225

ABSTRACT:
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.

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