Integrating n-type and p-type metal gate transistors

Details Integrating n-type and p-type metal gate transistors Integrating n-type and p-type metal gate transistors

2005-10-11

2005-10-11

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S233000, C438S585000, C438S926000

Reexamination Certificate

active

06953719

ABSTRACT:
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.

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