Integrating metal layers with ultra low-K dielectrics

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S626000, C257SE21535

Reexamination Certificate

active

07119008

ABSTRACT:
In forming a layer of a semiconductor wafer, a dielectric layer is deposited on the semiconductor wafer. The dielectric layer includes material having a low dielectric constant. Recessed and non-recessed areas are formed in the dielectric layer. A metal layer is deposited on the dielectric layer to fill the recessed areas and cover the non-recessed areas. The metal layer is then electropolished to remove the metal layer covering the non-recessed areas while maintaining the metal layer in the recessed areas.

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