Integrating dual supply voltage by removing the drain extender i

Details Integrating dual supply voltage by removing the drain extender i Integrating dual supply voltage by removing the drain extender i

1999-04-06

2000-12-05

Smith, Matthew

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257344, 257369, 257204, 257346, 257382, 257387, 438275, 438299, 438301, 438302, 438286, H01L 2976

Patent

active

061570621

ABSTRACT:
A dual voltage chip is fabricated with no intermediate-doped (LDD or MDD) area in the high-voltage transistors by adjusting the gate sidewall spacer thickness and the source/drain implant.

REFERENCES:
patent: 5338960 (1994-08-01), Beasom
patent: 5512771 (1996-04-01), Hiroki et al.
patent: 5576226 (1996-11-01), Hwang
patent: 5608240 (1997-03-01), Kumagai
patent: 5656861 (1997-08-01), Godinho et al.
patent: 5900666 (1999-05-01), Gardner et al.

Affiliated with

Also associated with

Rating

Integrating dual supply voltage by removing the drain extender i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrating dual supply voltage by removing the drain extender i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrating dual supply voltage by removing the drain extender i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-963892