Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-22
2011-03-22
Lee, Eugene (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S216000, C438S261000, C438S591000
Reexamination Certificate
active
07910446
ABSTRACT:
Electronic devices and methods for forming electronic devices that allow for a reduction in device dimensions while also maintaining or reducing leakage current for non-volatile memory devices are provided. In one embodiment, a method of fabricating a non-volatile memory device is provided. The method comprises depositing a floating gate polysilicon layer on a substrate, forming a silicon oxide layer on the floating gate polysilicon layer, depositing a first silicon oxynitride layer on the silicon oxide layer, depositing a high-k dielectric material layer on the first silicon oxynitride layer, depositing a second silicon oxynitride on the high-k dielectric material, and forming a control gate polysilicon layer on the second silicon oxynitride layer. In one embodiment, the high-k dielectric material layer comprises hafnium silicon oxynitride.
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Ahmed Khaled
Kher Shreyas
Ma Yi
Applied Materials Inc.
Lee Eugene
Patterson & Sheridan LLP
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