Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-03
2006-10-03
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S261000, C438S770000
Reexamination Certificate
active
07115469
ABSTRACT:
A process for fabrication of a semiconductor device including an ONO structure as a component of a flash memory device, comprising forming the ONO structure by providing a semiconductor substrate having a silicon surface; forming a first oxide layer on the silicon surface; depositing a silicon nitride layer on the first oxide layer; and forming a top oxide layer on the silicon nitride layer, wherein the top oxide layer is formed by an in-situ steam generation oxidation of a surface of the silicon nitride layer. The semiconductor device may be, e.g., a SONOS two-bit EEPROM device or a floating gate FLASH memory device including an ONO structure.
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Halliyal Arvind
Ramsbey Mark T.
Shiraiwa Hidehiko
Yang Jean Y.
Nguyen Tuan H.
Renner , Otto, Boisselle & Sklar, LLP
Spansion LLC
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