Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-02-16
2010-12-07
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S906000, C438S963000, C414S935000, C134S001300, C257SE21224, C257SE21226, C257SE21227
Reexamination Certificate
active
07846845
ABSTRACT:
A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.
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Bahng Kenneth J.
Davis Matthew Fenton
Kim Steven H.
Lill Thorsten
Applied Materials Inc.
Choi Calvin
Mulpuri Savitri
Patterson & Sheridan LLP
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