Integrated metal-insulator-metal capacitor and metal gate...

Details Integrated metal-insulator-metal capacitor and metal gate... Integrated metal-insulator-metal capacitor and metal gate...

2006-05-09

2006-05-09

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S250000, C438S381000, C438S393000

Reexamination Certificate

active

07041552

ABSTRACT:
An integrated circuit structure is disclosed that comprises a pair of capacitors, each having metal plates separated by an insulator, and metal gate semiconductor transistors electrically connected to the capacitors. The metal gate of the transistors and one of the metal plates of each of the capacitors comprise the same metal level in the integrated circuit structure. More specifically, each of the capacitors comprise a vertical capacitor having an upper metal plate vertically over a lower metal plate and each metal gate of the transistors and each upper metal plate of the capacitors comprise the same metal level in the integrated circuit structure.

REFERENCES:
patent: 5631188 (1997-05-01), Chang et al.
patent: 5633181 (1997-05-01), Hayashi
patent: 5903493 (1999-05-01), Lee
patent: 6033963 (2000-03-01), Huang et al.
patent: 6049114 (2000-04-01), Maiti et al.
patent: 6057583 (2000-05-01), Gardner et al.
patent: 6130123 (2000-10-01), Liang et al.
patent: 6165858 (2000-12-01), Gardner et al.
patent: 6198617 (2001-03-01), Sun
patent: 6285038 (2001-09-01), Rhodes
patent: 6333223 (2001-12-01), Moriwaki et al.
patent: 6341056 (2002-01-01), Allman et al.
patent: 6451667 (2002-09-01), Ning
patent: 6528834 (2003-03-01), Durcan et al.
patent: 2001/0055842 (2001-12-01), Uh et al.
patent: 2002/0068394 (2002-06-01), Tokushige et al.
patent: 2004/0245583 (2004-12-01), Horiuchi et al.
patent: 2005/0001267 (2005-01-01), Miyagawa et al.
patent: 2001-144188 (2001-02-01), None
“New Paradigm of Silicon Technology,” Tadahiro Ohmi, et al., Proceedings of the IEEE, vol. 89, No. 3, Mar. 2001, pp. 394-412.
“Dual-Metal Gate CMOS Technology with Ultrathin Silicon Nitride Gate Dielectric,” Yee-Chia Yeo et al., IEEE Electron Device Letters, vol. 22, No. 5, May 2001, pp. 227-229.
“Dual-Metal Gate Technology for Deep-Submicron CMOS Transistor, ” Qiang Lu et al., IEEE 2000 Symposium on VLSI Technology Digest of Technical Papers, pp. 72-73.

Affiliated with

Also associated with

Rating

Integrated metal-insulator-metal capacitor and metal gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated metal-insulator-metal capacitor and metal gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated metal-insulator-metal capacitor and metal gate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3609216