Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-09
2010-06-15
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S533000, C438S662000, C438S664000, C257SE21002
Reexamination Certificate
active
07737036
ABSTRACT:
Post-laser annealing dopant deactivation is minimized by performing certain low temperature process steps prior to laser annealing.
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Official Action Dated Dec. 28, 2009 Issued in Co-Pending U.S. Appl. No. 11/836 326.
Ahmed Khaled Z.
Kraus Philip Allan
Ma Yi
Mayur Abhilash J.
Olsen Christopher Sean
Applied Materials Inc.
Law Office of Robert M. Wallace
Novacek Christy L
Smith Zandra
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