Integrated circuit fabrication process using a compression...

Details Integrated circuit fabrication process using a compression... Integrated circuit fabrication process using a compression...

2011-01-04

2011-01-04

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S533000, C438S637000, C438S672000, C438S508000

Reexamination Certificate

active

07863193

ABSTRACT:
Post-laser annealing dopant deactivation is minimized by performing certain silicide formation process steps prior to laser annealing. A base metal layer is deposited on the source-drain regions and the gate electrode, followed by deposition of an overlying compression cap layer, to prevent metal agglomeration at the silicon melting temperature. Thereafter, a rapid thermal process is performed to heat the substrate sufficiently to form metal silicide contacts at the top surfaces of the source-drain regions and of the gate electrode. The method further includes removing the remainder of the metal-containing layer and then depositing an optical absorber layer over the substrate prior to laser annealing near the silicon melting temperature.

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