Integrated circuit and methods of measurement and...

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Reexamination Certificate

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Reexamination Certificate

active

07812347

ABSTRACT:
A method for measuring an integrated circuit (IC) structure by measuring an imprint of the structure, a method for preparing a test site for the above measuring, and IC so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so as to reveal an imprint of the removed bottom surface of the structure in a top surface of the substrate. The imprint can then be imaged using an atomic force microscope (AFM). The image can be used to measure the bottom surface of the structure.

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Raineri et al., “Carrier Distribution in Silicon Devices by Atomic Force Microscopy on Etched Surfaces”, Appl. Phys. Lett. 64 (3) Jan. 17, 1994, pp. 354-356.

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