Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2008-03-07
2010-10-12
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
Reexamination Certificate
active
07812347
ABSTRACT:
A method for measuring an integrated circuit (IC) structure by measuring an imprint of the structure, a method for preparing a test site for the above measuring, and IC so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so as to reveal an imprint of the removed bottom surface of the structure in a top surface of the substrate. The imprint can then be imaged using an atomic force microscope (AFM). The image can be used to measure the bottom surface of the structure.
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Banke, Jr. George W.
Deering Andrew
Kaszuba Philip V.
Moszkowicz Leon
Robert James
International Business Machines - Corporation
MacKinnon Ian
Pert Evan
Roberts Mlotkowski Safran & Cole P.C.
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