Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-02-08
2005-02-08
Zarneke, David A. (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S776000, C438S780000
Reexamination Certificate
active
06852650
ABSTRACT:
An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.
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Fukazawa Atsuki
Hyodo Yasuyoshi
Kato Manabu
Matsuki Nobuo
Morisada Yoshinori
ASM Japan K.K.
Kilday Lisa
Knobbe Martens Olson & Bear LLP
Zarneke David A.
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