Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-31
2008-08-26
Toledo, Fernando L (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S250000, C361S301400, C257SE23077, C257SE27116, C257SE29295
Reexamination Certificate
active
07416938
ABSTRACT:
An integrated thin-film capacitor includes a dielectric disposed between a first electrode and a second electrode. The thin-film capacitor includes a dielectric disposed upon the first electrode, and the dielectric exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof. A computing system is also disclosed that includes the thin-film capacitor.
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Min Yongki
Seh Huankiat
Greaves John N.
Intel Corporation
Toledo Fernando L
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