Inductively coupled plasma processing chamber

Details Inductively coupled plasma processing chamber Inductively coupled plasma processing chamber

1996-08-22

1999-08-31

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

118723I, 156345, C23C 1600

Patent

active

059448997

ABSTRACT:
An apparatus and method are provided for an inductively coupled plasma within a reactor for processing semiconductor wafers or workpieces. A gas distribution system having an annular passage formed between the chamber walls and quartz dome uniformly inlet gases over the wafer. The system of the present invention provides an increased etch rate with high selectively and anistropy.

REFERENCES:
patent: 5681418 (1997-10-01), Ishimaru
patent: 5688357 (1997-11-01), Hanawa
patent: 5688358 (1997-11-01), Tanaka et al.
patent: 5753044 (1998-05-01), Hanawa et al.
patent: 5777289 (1998-07-01), Hanawa et al.

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