Inductively coupled plasma chemical vapor deposition technology

Details Inductively coupled plasma chemical vapor deposition technology Inductively coupled plasma chemical vapor deposition technology

1997-03-18

2000-07-25

Picard, Leo P.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438788, 438158, 438148, 438DIG1, 257 52, 257 54, 257 64, H01L 21265, H01L 21316

Patent

active

060936606

ABSTRACT:
Disclosed is an inductively coupled plasma chemical vapor deposition method for depositing a selected thin film on a substrate from inductively coupled plasma, the method including the steps of: providing a vacuum reaction chamber including an interior bounded, in part by a dielectric shield, the dielectric shield having an amorphous silicon layer on its interior surface, and an antenna arranged outside the deposition chamber adjacent to the dielectric shield where RF power is applied; placing the substrate on a stage with the chamber; exhausting the vacuum reaction chamber leaving a vacuum state; introducing a reactant gas to the vacuum reaction chamber at a predetermined pressure; and applying RF power to the antenna, whereby inductively coupled plasma for deposition of a thin film from the reactant gas is formed within the vacuum chamber.

REFERENCES:
patent: 4804608 (1989-02-01), Tawada
patent: 5326712 (1994-07-01), Bae
patent: 5677236 (1997-10-01), Saitoh
patent: 5804454 (1998-09-01), Mori et al.
patent: 5951773 (1999-09-01), Jang et al.
"Electrostatic Coupling of Antenna and the Shielding Effect in Inductive RF Plasmas", H. Sugai et al, Jpn. Journal of Appl. Phys. vol. 23 (1994), pp. 2189-2193. Part 1, No. 4B, Apr. 1994.
"High Rate and Highly Selective SiO.sub.2 Etching Employing Inductively Coupled Plasma and Discussion on Reation Kinetics", Y. Horike et al, Journal Vac. Sci. Technol. A 13 (3) May/Jun. 1995, pp. 801-809.
"Characterization at Different Aspect Ratios (Radius/Length) of a Radion Frequency Inductively Coupled Cource", P. Wainman et al, Journal Vac. Sci. Technol., A 13(5, Sep./Oct. 1995, pp. 2464-2469.
"Deposition of Hydrogentaed Amorphous Silicon by an Inductively Coupled Glow Discharge Reactor With Shield Electrodes", K. Yokota et al, Journal of Applied Physics, vol. 72, No. 3, Aug. 1, 1992, pp. 1188-1190.
"Structural Properties of Polycrystalline Silicon Films Prepared at Low Temperature by Plasma Chemical Vapor Deposition", H. Kakinuma et al, J. Appl Phys., vol. 70, No. 12, Dec. 15, 1991, pp. 7374-7381.

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