Independent gas feeds in a plasma reactor

Details Independent gas feeds in a plasma reactor Independent gas feeds in a plasma reactor

1997-11-21

2000-01-04

Bell, Bruce F.

Coating apparatus

Gas or vapor deposition

With treating means

118723E, 118723ER, 118723IR, 156345C, 216 2, 216 37, 216 58, 216 63, 216 67, 216 68, 216 71, 216 74, 216 79, 216 99, 20419232, 20419237, 20429831, 20429833, 20429834, C23C 1600

Patent

active

060098309

ABSTRACT:
A plasma etch reactor having independent gas feeds above the wafer and either at the sides or below the wafer. Preferably, a carrier gas such as argon is supplied from a showerhead electrode above the wafer while an etching gas is supplied from below. In the case of selectively etching an oxide over a non-oxide layer, the etchant gas should include one or more fluorocarbons.

REFERENCES:
patent: 5356515 (1994-10-01), Tahara et al.
patent: 5476182 (1995-12-01), Ishizuka et al.
patent: 5542559 (1996-08-01), Kawakami et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5698062 (1997-12-01), Sakamoto et al.

Affiliated with

Also associated with

Rating

Independent gas feeds in a plasma reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Independent gas feeds in a plasma reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Independent gas feeds in a plasma reactor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1064318