Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-29
2008-01-29
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S299000, C257SE21435, C257SE21632
Reexamination Certificate
active
07323377
ABSTRACT:
In one embodiment, a method of fabricating an integrated circuit includes the steps of: (i) forming composite spacers on sidewalls of a transistor gate, each of the composite spacers comprising a first liner having a stepped portion and a disposable spacer material over the stepped portion; (ii) forming a source/drain region by performing ion implantation through a portion of the first liner over the source/drain region; (iii) replacing the disposable spacer material with a second liner formed over the first liner after forming the source/drain region; (iv) forming a pre-metal dielectric over the second liner; and (v) forming a self-aligned contact through the pre-metal dielectric. Among other advantages, the method allows for an increased contact area for a self-aligned contact.
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Blosse Alain P.
Chowdhury Dutta Saurabh
Rathor Manuj
Sedigh Mehran
Cypress Semiconductor Corporation
Lindsay, Jr. Walter L
Okamoto & Benedicto LLP
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