Increasing electromigration lifetime and current density in...

Details Increasing electromigration lifetime and current density in... Increasing electromigration lifetime and current density in...

2007-10-09

2008-10-21

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S624000, C257S758000, C257SE21576

Reexamination Certificate

active

07439173

ABSTRACT:
An integrated circuit with increased electromigration lifetime and allowable current density and methods of forming same are disclosed. In one embodiment, an integrated circuit includes a conductive line connected to at least one functional via, and at least one dummy via having a first, lower end electrically connected to the conductive line and a second upper end electrically unconnected (isolated) to any conductive line. Each dummy via extends vertically upwardly from the conductive line and removes a portion of a fast diffusion path, i.e., metal to dielectric cap interface, which is replaced with a metal to metallic liner interface. As a result, each dummy via reduces metal diffusion rates and thus increases electromigration lifetimes and allows increased current density.

REFERENCES:
patent: 5675187 (1997-10-01), Numata et al.
patent: 6103617 (2000-08-01), Yoon et al.
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6197685 (2001-03-01), Domae et al.
patent: 6307268 (2001-10-01), Lin
patent: 6342733 (2002-01-01), Hu et al.
patent: 6399897 (2002-06-01), Umematsu et al.
patent: 6489684 (2002-12-01), Chen et al.
patent: 6717268 (2004-04-01), Hau-Riege
patent: 2003/0089996 (2003-05-01), Hau-Riege
patent: 2004/0067638 (2004-04-01), Hau-Riege
patent: 2004/0251555 (2004-12-01), Asai et al.
patent: 2005/0121792 (2005-06-01), Harada
patent: 2005/0266677 (2005-12-01), Hayashi et al.
patent: 3034545 (1991-02-01), None
patent: 07074176 (1995-03-01), None
patent: 2000012688 (2000-01-01), None

Affiliated with

Also associated with

Rating

Increasing electromigration lifetime and current density in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Increasing electromigration lifetime and current density in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Increasing electromigration lifetime and current density in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3999854