In-situ plasma etch for TERA hard mask materials

Details In-situ plasma etch for TERA hard mask materials In-situ plasma etch for TERA hard mask materials

2005-06-07

2005-06-07

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S714000, C438S725000

Reexamination Certificate

active

06903023

ABSTRACT:
A method for removing carbon from or stripping a TERA layer. The method includes exposing the TERA layer to a plasma containing an effective amount of nitrogen, and, optionally, oxygen or fluorine. The method is compatible with fluorine based etching systems, and may thus be performed in the same etching system as other etching steps. For example, the method may be performed in the same system as a fluorine based plasma etch for oxide or nitride. The invention includes the method of stripping a TERA layer, etching an oxide layer, and etching a nitride layer in situ in the same etching system. The method is performed at low ion energies to avoid damaging oxide or nitride layers under the TERA film and to provide good selectivity.

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