In-situ photoresist capping process for plasma etching

Details In-situ photoresist capping process for plasma etching In-situ photoresist capping process for plasma etching

1985-05-20

1986-09-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 156904, 20419215, 20419232, 252 791, 427 38, 430313, H01L 21306, B44C 122, C03C 1500, B05D 306

Patent

active

046134000

ABSTRACT:
A two-step photoresist capping process for enhancing the etch resistance of photoresist during chlorinated plasma etching of silicon-containing materials comprises exposing the photoresist to a chlorinated plasma to form a silicon-chlorine containing material on the photoresist, and then exposing the resulting layer to an oxidizing plasma containing a chlorine etching species to selectivity oxidize the capping layer.

REFERENCES:
patent: 4333793 (1982-06-01), Lifshitz et al.
patent: 4521275 (1985-06-01), Purdes

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