Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-09-26
2006-09-26
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S628000, C438S681000
Reexamination Certificate
active
07112541
ABSTRACT:
A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.
REFERENCES:
patent: 3297501 (1967-01-01), Reisman
patent: 3306501 (1967-02-01), Keller
patent: 3709672 (1973-01-01), DeSantis et al.
patent: 3805425 (1974-04-01), Spoida et al.
patent: 3926774 (1975-12-01), Watson et al.
patent: 4324845 (1982-04-01), Stockel
patent: 4425963 (1984-01-01), Scholz et al.
patent: 4508054 (1985-04-01), Baumberger et al.
patent: 4616122 (1986-10-01), Burian et al.
patent: 4661140 (1987-04-01), Takimoto et al.
patent: 4699083 (1987-10-01), Huet et al.
patent: 4699084 (1987-10-01), Wilson et al.
patent: 4699805 (1987-10-01), Seelbach et al.
patent: 4836558 (1989-06-01), Anderson et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5030746 (1991-07-01), Schilling, Jr.
patent: 5055169 (1991-10-01), Hock, Jr. et al.
patent: 5066169 (1991-11-01), Gavin et al.
patent: 5112442 (1992-05-01), Goodson
patent: 5160543 (1992-11-01), Ishihara et al.
patent: 5204314 (1993-04-01), Kirlin et al.
patent: 5273588 (1993-12-01), Foster et al.
patent: 5336324 (1994-08-01), Stall et al.
patent: 5372754 (1994-12-01), Ono
patent: 5376409 (1994-12-01), Kaloyeros et al.
patent: 5383970 (1995-01-01), Asaba et al.
patent: 5391232 (1995-02-01), Kanai et al.
patent: 5400476 (1995-03-01), White
patent: 5400603 (1995-03-01), Bauer et al.
patent: 5419924 (1995-05-01), Nagashima et al.
patent: 5421895 (1995-06-01), Tsubouchi et al.
patent: 5494101 (1996-02-01), Esser et al.
patent: 5527567 (1996-06-01), Desu et al.
patent: 5534068 (1996-07-01), Beach et al.
patent: 5558717 (1996-09-01), Zhao et al.
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5630878 (1997-05-01), Miyamoto et al.
patent: 5656329 (1997-08-01), Hampden-Smith et al.
patent: 5660201 (1997-08-01), Turner
patent: 5681613 (1997-10-01), Hansen
patent: 5725675 (1998-03-01), Fong et al.
patent: 5728222 (1998-03-01), Barbee et al.
patent: 5783253 (1998-07-01), Roh
patent: 5820641 (1998-10-01), Gu et al.
patent: 5834060 (1998-11-01), Kawahara et al.
patent: 5835678 (1998-11-01), Li et al.
patent: 5840254 (1998-11-01), Carver, Jr. et al.
patent: 5855681 (1999-01-01), Maydan et al.
patent: 5865421 (1999-02-01), Ono
patent: 5882411 (1999-03-01), Zhao et al.
patent: 5882416 (1999-03-01), Van Buskirk et al.
patent: 5885356 (1999-03-01), Zhao et al.
patent: 5900060 (1999-05-01), Nause et al.
patent: 5906683 (1999-05-01), Chen et al.
patent: 5911834 (1999-06-01), Fairbairn et al.
patent: 5948704 (1999-09-01), Benjamin et al.
patent: 5968276 (1999-10-01), Lei et al.
patent: 6054206 (2000-04-01), Mountsier
patent: 6056823 (2000-05-01), Sajoto et al.
patent: 6066209 (2000-05-01), Sajoto et al.
patent: 6068884 (2000-05-01), Rose et al.
patent: 6077562 (2000-06-01), Dornfest et al.
patent: 6140226 (2000-10-01), Grill et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6202656 (2001-03-01), Schmitt
patent: 6224681 (2001-05-01), Sivaramakrishnan et al.
patent: 6350670 (2002-02-01), Andideh et al.
patent: 6498898 (2002-12-01), Schmitt
patent: 6518646 (2003-02-01), Hopper et al.
patent: 6521302 (2003-02-01), Campana-Schmitt et al.
patent: 6527865 (2003-03-01), Sajoto et al.
patent: 6593247 (2003-07-01), Huang et al.
patent: 6627532 (2003-09-01), Gaillard et al.
patent: 6656837 (2003-12-01), Xu et al.
patent: 6740539 (2004-05-01), Conti et al.
patent: 6756674 (2004-06-01), Catabay et al.
patent: 6784119 (2004-08-01), Gaillard et al.
patent: 6849561 (2005-02-01), Goundar
patent: 6902440 (2005-06-01), Dougan et al.
patent: 6903004 (2005-06-01), Spencer et al.
patent: 6903445 (2005-06-01), Ryuzaki et al.
patent: 6913992 (2005-07-01), Schmitt et al.
patent: 7034409 (2006-04-01), Xu et al.
patent: 2002/0054962 (2002-05-01), Huang
patent: 2003/0194495 (2003-10-01), Li et al.
patent: 2003/0228769 (2003-12-01), Chen et al.
patent: 2004/0076767 (2004-04-01), Satoh et al.
patent: 2004/0101633 (2004-05-01), Zheng et al.
patent: 2004/0155340 (2004-08-01), Owada et al.
patent: 2004/0166665 (2004-08-01), Gaillard et al.
patent: 2004/0169283 (2004-09-01), Baek et al.
patent: 2004/0253388 (2004-12-01), Kim
patent: 2005/0026422 (2005-02-01), Kim et al.
patent: 2005/0051900 (2005-03-01), Liu et al.
patent: 2005/0118799 (2005-06-01), Wu
patent: 2005/0130405 (2005-06-01), Spencer et al.
patent: 0 636 704 (1995-02-01), None
patent: 0 709 355 (1996-05-01), None
patent: 0 738 788 (1996-10-01), None
patent: 0 780 490 (1997-06-01), None
patent: 21-48835 (1990-06-01), None
patent: 60-27690 (1994-02-01), None
patent: 07-29827 (1995-01-01), None
patent: 11-297681 (1999-10-01), None
M'Saad Hichem
Witty Derek R.
Xia Li-Qun
Xu Huiwen
Applied Materials Inc.
Patterson and Sheridan
Smith Matthew
Tobergte Nicholas J.
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