Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2006-08-22
2006-08-22
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
With measuring or testing
C118S712000, C427S255230
Reexamination Certificate
active
07094614
ABSTRACT:
A method and apparatus are provided for controlling a CVD process used to deposit films on semiconductor substrates wherein the by-products of the reaction are measured and monitored during the reaction preferably using mass spectrometry and the results used to calculate the concentrations of the by-products and to control the CVD reaction process based on the by-product concentrations. An exemplary CVD process is the deposition of tungsten metal on a semiconductor wafer. A preferred method and apparatus uses a capillary gas sampling device for removing the by-product gases of the reaction as a feed for the mass spectrometer. The capillary gas sampling device is preferably connected to a differential pump.
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Armbrust Douglas S.
Baker John M.
Ballantine Arne W.
Cheek Roger W.
DiMilia Doreen D.
DeLio & Peterson LLC
Diaz José R.
Jackson Jerome
Sabo William D.
Tomaszewski John J.
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