Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2011-01-18
2011-01-18
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C257SE21528, C438S016000
Reexamination Certificate
active
07871828
ABSTRACT:
The present invention generally provides methods and apparatus for monitoring ion dosage during a plasma process. One embodiment of the present invention provides a method for processing a substrate comprising generating a correlation between the at least one attribute of optical emissions of the plasma and a dosage quantity. In one embodiment, the attribute of optical emissions of the plasma is optical emission intensity of an ion species in the plasma.
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Cho Seon-Mee
Foad Majeed A.
Applied Materials Inc.
Hall Jessica
Landau Matthew C
Patterson & Sheridan LLP
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