In-situ dose monitoring using optical emission spectroscopy

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed

Reexamination Certificate

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C257SE21528, C438S016000

Reexamination Certificate

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07871828

ABSTRACT:
The present invention generally provides methods and apparatus for monitoring ion dosage during a plasma process. One embodiment of the present invention provides a method for processing a substrate comprising generating a correlation between the at least one attribute of optical emissions of the plasma and a dosage quantity. In one embodiment, the attribute of optical emissions of the plasma is optical emission intensity of an ion species in the plasma.

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