In-situ discharge to avoid arcing during plasma etch processes

Details In-situ discharge to avoid arcing during plasma etch processes In-situ discharge to avoid arcing during plasma etch processes

2005-07-05

2005-07-05

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000

Reexamination Certificate

active

06914007

ABSTRACT:
A method of reducing a charge on a substrate to prevent an arcing incident in a subsequent etch process is described. A patterned substrate is fastened to a chuck in a process chamber. A discharge process is performed that includes the three steps of (a) coupling the chuck to a 0 volt connection, (b) generating a plasma, and (c) coupling the chuck to a high voltage connection. The three steps are carried out in any sequence. An inert gas or an inert gas and an etching gas are flowed into the chamber during the discharge sequence. Alternatively, a fluorocarbon CXFYHZor a fluorocarbon and a gas such as O2, H2, N2, N2O, CO, CO2, He or Ar is flowed into the chamber during the discharge sequence. The method is compatible with batch or single wafer processes and is extendable to etching low k dielectric layers with poor thermal conductivity.

REFERENCES:
patent: 5292399 (1994-03-01), Lee et al.
patent: 5583737 (1996-12-01), Collins et al.
patent: 5895549 (1999-04-01), Goto et al.
patent: 6139701 (2000-10-01), Pavate et al.
patent: 6251792 (2001-06-01), Collins et al.

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