In-situ deposition for cu hillock suppression

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257SE23161

Reexamination Certificate

active

07423347

ABSTRACT:
A semiconductor interconnect structure having reduced hillock formation and a method for forming the same are provided. The semiconductor interconnect structure includes a conductor formed in a dielectric layer. The conductor includes at least three sub-layers, wherein the ratio of the impurity concentrations in neighboring sub-layers is preferably greater than about two.

REFERENCES:
patent: 5439731 (1995-08-01), Li et al.
patent: 5691571 (1997-11-01), Hirose et al.
patent: 6067680 (2000-05-01), Pan et al.
patent: 6362090 (2002-03-01), Paik et al.
patent: 6426289 (2002-07-01), Farrar
patent: 6445422 (2002-09-01), Ngo et al.
patent: 6703712 (2004-03-01), Gilkes et al.
patent: 6713875 (2004-03-01), Farrar
patent: 6724089 (2004-04-01), Trivedi et al.
patent: 6731006 (2004-05-01), Halliyal et al.
patent: 6756302 (2004-06-01), Shan et al.
patent: 6764951 (2004-07-01), van Ngo
patent: 6818548 (2004-11-01), Lavric et al.
patent: 6846752 (2005-01-01), Chambers et al.
patent: 6858534 (2005-02-01), Mouli
patent: 6893957 (2005-05-01), Trivedi et al.
patent: 6897147 (2005-05-01), Tsai et al.
patent: 6903014 (2005-06-01), Batra et al.
patent: 6979625 (2005-12-01), Woo et al.
patent: 7115510 (2006-10-01), Basol et al.
patent: 7169700 (2007-01-01), Chang et al.
patent: 7187080 (2007-03-01), Jiang et al.
patent: 2004/0188850 (2004-09-01), Lee et al.
patent: 2004/0259378 (2004-12-01), Chambers et al.
patent: 2005/0275941 (2005-12-01), Liu et al.
patent: 2006/0091551 (2006-05-01), Lin et al.

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