Implantation of multiple species to address copper reliability

Details Implantation of multiple species to address copper reliability Implantation of multiple species to address copper reliability

2011-01-04

2011-01-04

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S527000, C438S627000, C438S628000, C438S655000, C257SE21584

Reexamination Certificate

active

07863194

ABSTRACT:
A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.

REFERENCES:
patent: 7745282 (2010-06-01), Yang et al.

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