Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1997-12-17
2000-03-07
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438586, 438597, 438626, H01L 213205, H01L 214763
Patent
active
060339756
ABSTRACT:
A semiconductor device (60) may comprise a semiconductor layer (12) having an outer surface (20). A plurality of gates (18) may be disposed over the outer surface (20) of the semiconductor layer (12). An isolation cover (30) may be disposed over the gates (18). An implant screen (40) may be grown on the outer surface (20) of the semiconductor layer (12) between the isolation covers (30) of the gates (18).
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Local Oxidation of Silicon and its Application in Semiconductor-Device Technology*), by J.A. Appels, E. Kooi, M.M. Paffen, J.J.H. Schatorje and W.H.C.G. Verkuylen, Philips Res. Repts 25, (1970), pp. 118-132, *) This paper corresponds to a paper presented by the authors at the 3rd conference on Solid State Devices, Exeter (England), Sep. 1969.
"VLSI Technology", S.M. Sze, pp. 466, McGraw-Hill Book Co. (1983).
Anderson Dirk Noel
Kwok Siang Ping
Liu Jiann
Richardson William F.
Brady III Wade James
Donaldson Richard L.
Garner Jacqueline J.
Hack Jonathan
Niebling John F.
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