Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-03
2009-06-09
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S432000
Reexamination Certificate
active
07544982
ABSTRACT:
An image sensor device is provided. A substrate has a photosensor region formed therein and/or thereon. An interconnection structure is formed over the substrate, and includes metal lines formed in inter-metal dielectric (IMD) layers. At least one IMD-level micro-lens is/are formed in at least one of the IMD layers over the photosensor region. Preferably, barrier layers are located between the IMD layers. Preferably, each of the barrier layers at each level has a net thickness limited to 100 angstroms or less at locations over the photosensor region, except at locations where the IMD-level micro-lenses are located. The IMD-level micro-lenses and the etch stop layers preferably have a refractive index greater than that of the IMD layers. A cap layer is preferably formed on the metal lines, especially when the metal lines include copper. An upper-level micro-lens may be located on a level that is above the interconnection structure.
REFERENCES:
patent: 6301051 (2001-10-01), Sankur
patent: 6521523 (2003-02-01), Lee et al.
patent: 6577342 (2003-06-01), Wester
patent: 6583438 (2003-06-01), Uchida
patent: 6587147 (2003-07-01), Li
patent: 6624404 (2003-09-01), Lee et al.
patent: 6639726 (2003-10-01), Campbell
patent: 6646808 (2003-11-01), Li
patent: 6665014 (2003-12-01), Assadi et al.
patent: 6736626 (2004-05-01), Lienau
patent: 6821810 (2004-11-01), Hsiao et al.
patent: 6861686 (2005-03-01), Lee et al.
patent: 6977218 (2005-12-01), Yu et al.
patent: 7064405 (2006-06-01), Kondo et al.
patent: 7078746 (2006-07-01), Hong
patent: 7084056 (2006-08-01), Won
patent: 7291826 (2007-11-01), Vaillant
patent: 2005/0001318 (2005-01-01), Won
patent: 2006/0113622 (2006-06-01), Adkisson et al.
patent: 2006/0141653 (2006-06-01), Choi
Fu Shih-Chi
Tsai Chia-Shiung
Yu Chung-Yi
Prenty Mark
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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