Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-08-28
2007-08-28
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S434000, C257S666000
Reexamination Certificate
active
11177335
ABSTRACT:
An image sensor device including a protective plate may be manufactured from an image sensor chip having an active surface and a back surface opposite to the active surface. The image sensor chip may include chip pads formed in a peripheral region of the active surface, a microlens formed in a central region of the active surface and an intermediate region between the peripheral and central regions. A protective plate may be attached to the intermediate region of the active surface of the image sensor chip using an adhesive pattern that is sized and configured to maintain a separation distance between the protective plate and the microlens formed on the image sensor chip. Conductive plugs, formed before, during or after the manufacture of the image sensor chip circuitry may provide electrical connection between the chip pads and external connectors.
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Office Action for corresponding Korean Application No. 10-2005-0001684 dated Jun. 26, 2006.
Han Seong-Il
Jang Dong-Hyeon
Kang Suk-Chae
Kim Gu-Sung
Kwon Yong-Chai
Harness & Dickey & Pierce P.L.C.
Nguyen Cuong
Samsung Electronics Co,. Ltd.
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