Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-02
2009-02-17
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000
Reexamination Certificate
active
07491992
ABSTRACT:
A structure (and method for forming the same) for an image sensor cell. The method includes providing a semiconductor substrate. Then, a charge collection well is formed in the semiconductor substrate, the charge collection well comprising dopants of a first doping polarity. Next, a surface pinning layer is formed in the charge collection well, the surface pinning layer comprising dopants of a second doping polarity opposite to the first doping polarity. Then, an electrically conductive push electrode is formed in direct physical contact with the surface pinning layer but not in direct physical contact with the charge collection well. Then, a transfer transistor is formed on the semiconductor substrate. The transfer transistor includes first and second source/drain regions and a channel region. The first and second source/drain regions comprise dopants of the first doping polarity. The first source/drain region is in direct physical contact with the charge collection well.
REFERENCES:
patent: 5877521 (1999-03-01), Johnson et al.
patent: 5929470 (1999-07-01), Harada et al.
patent: 6127697 (2000-10-01), Guidash
patent: 6218691 (2001-04-01), Chung et al.
patent: 6297070 (2001-10-01), Lee et al.
patent: 6504195 (2003-01-01), Guidash
patent: 6713796 (2004-03-01), Fox
patent: 6730899 (2004-05-01), Stevens et al.
patent: 6750490 (2004-06-01), Berezin
patent: 7253392 (2007-08-01), Hong et al.
patent: 2002/0190288 (2002-12-01), Lee et al.
patent: 2003/0062561 (2003-04-01), Guidash
patent: 2004/0007754 (2004-01-01), Adachi et al.
patent: 2004/0036009 (2004-02-01), Takayanagi et al.
patent: 2005/0051701 (2005-03-01), Hong
patent: 1135184 (2006-12-01), None
Adkisson James W.
Ellis-Monaghan John J.
Gambino Jeffrey P.
Jaffe Mark D.
Rassel Richard J.
Canale Anthony J.
International Business Machines - Corporation
Loke Steven
Nguyen Tram H
Schmeiser Olsen & Watts
LandOfFree
Image sensor cells does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Image sensor cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor cells will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4092729