Image sensor and related fabrication method

Details Image sensor and related fabrication method Image sensor and related fabrication method

2006-03-22

2009-10-06

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S202000, C438S203000, C438S211000, C438S257000, C438S593000, C257SE27133, C257SE27135, C257SE27138

Reexamination Certificate

active

07598136

ABSTRACT:
An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area, wherein the pixel area comprises an active region and the transfer gate electrode is disposed on the active region. A method of fabricating the image sensor is also provided. The method comprises preparing a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, doping the polysilicon layer with impurity ions, and patterning the polysilicon layer.

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