Image sensor and method of fabricating the same

Details Image sensor and method of fabricating the same Image sensor and method of fabricating the same

2007-02-15

2009-10-13

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27132

Reexamination Certificate

active

07601580

ABSTRACT:
An image sensor may include a semiconductor substrate having a pixel array region and a logic region. A first gate electrode may be formed on the pixel array region of the semiconductor substrate. A lower electrode may be formed on a portion of the logic region of the semiconductor substrate. A first capping layer may be formed on at least a portion of the lower electrode. A dielectric layer may be formed on the first capping layer. An upper electrode may be formed on the dielectric layer. The first gate electrode and the lower electrode may include a polysilicon layer, and the first capping layer may include at least one of a metal layer and a metal silicide layer.

REFERENCES:
patent: 7038259 (2006-05-01), Rhodes
patent: 2006/0057760 (2006-03-01), Yi et al.
patent: 2002-353331 (2002-12-01), None
patent: 1999-005824 (1999-01-01), None
patent: 1999-0070753 (1999-09-01), None
patent: 10-2000-0024718 (2000-05-01), None

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