Image sensor and fabrication method thereof

Details Image sensor and fabrication method thereof Image sensor and fabrication method thereof

2006-08-11

2009-06-09

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C257SE21630

Reexamination Certificate

active

07544560

ABSTRACT:
Example embodiments relate to an image sensor and a fabrication method thereof, capable of reducing dark current and a fabrication method thereof. The image sensor may include a semiconductor substrate including an active region defined by an isolation layer, a photoelectric-conversion region and a charge-movement-prevention region formed at an interface between the photoelectric-conversion region and the isolation layer.

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Office Action for corresponding Korean Application No. 10-2005-074445 dated Sep. 30, 2006.

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