Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-01-25
2011-01-25
Berman, Jack I (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100
Reexamination Certificate
active
07875863
ABSTRACT:
An EUV illumination system, for example, for use in a photolithographic apparatus is configured to condition a radiation beam. A hydrogen radical source configured to supply gas containing hydrogen or hydrogen radicals into the illumination system. The hydrogen gas is effective to remove carbonaceous contamination from the surface of a mirror in the illumination system or to form a buffer against unwanted gases. In order to prevent damage by hydrogen that penetrates the mirror, the mirror comprises a layer made of metal non-metal compound adjacent a reflection surface of the mirror. A transition metal carbide, nitride, boride or silicide compound or mixture thereof may be used for example.
REFERENCES:
patent: 2003/0147058 (2003-08-01), Murakami et al.
patent: 2006/0131515 (2006-06-01), Partlo et al.
patent: 2006/0163500 (2006-07-01), Inoue et al.
patent: 2006/0278833 (2006-12-01), Van Herpen et al.
Sergiy Yulin et al., “High-temperature MoSi2/Si and Mo/C/Si/C multilayer mirrors”, published in a poster session of the 3rdInternational EUVL Symposium Nov. 1-4, 2004 Miyazaki, Japan.
Banine Vadim Yevgenyevich
Klunder Derk Jan Wilfred
Singh Mandeep
Van Herpen Maarten Marinus Johannes Wilhelmus
Voorma Harm-Jan
ASML Netherlands B.V.
Berman Jack I
Chang Hanway
Pillsbury Winthrop Shaw Pittman ILP
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