Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-27
2008-10-07
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S192000, C257SE29089
Reexamination Certificate
active
07432565
ABSTRACT:
A III-V based, implant free MOS heterostructure field-effect transistor device comprises a gate insulator layer overlying a compound semiconductor substrate; ohmic contacts coupled to the compound semiconductor substrate proximate opposite sides of an active device region defined within the compound semiconductor substrate; and a gate metal contact electrode formed on the gate insulator layer in a region between the ohmic contacts. The ohmic contacts have portions thereof that overlap with portions of the gate insulator layer within the active device region. The overlapping portions ensure avoidance of an undesirable gap formation between an edge of the ohmic contact and a corresponding edge of the gate insulator layer.
REFERENCES:
patent: 5196907 (1993-03-01), Birkle et al.
patent: 5902130 (1999-05-01), Passlack et al.
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6369408 (2002-04-01), Lotfi et al.
patent: 6522158 (2003-02-01), Fung et al.
patent: 6597193 (2003-07-01), Lagowski et al.
patent: 6680621 (2004-01-01), Savtchouk et al.
patent: 6771092 (2004-08-01), Fung et al.
patent: 2003/0013266 (2003-01-01), Fukuda et al.
patent: 2003/0137018 (2003-07-01), Passlack et al.
patent: 2004/0137673 (2004-07-01), Passlack et al.
patent: 2004/0206979 (2004-10-01), Braddock
patent: 2005/0062048 (2005-03-01), Hayashi et al.
patent: 2006/0054937 (2006-03-01), Lucovsky et al.
patent: 1082671 (1989-03-01), None
Balconi-Lamica Michael J.
Dolan Jennifer M
Freescale Semiconductor Inc.
Jr. Carl Whitehead
LandOfFree
III-V compound semiconductor heterostructure MOSFET device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with III-V compound semiconductor heterostructure MOSFET device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-V compound semiconductor heterostructure MOSFET device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4003460