IC chip solder bump structure and method of manufacturing same

Details IC chip solder bump structure and method of manufacturing same IC chip solder bump structure and method of manufacturing same

2005-12-20

2005-12-20

Clark, Jasmine (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S614000, C438S615000, C438S632000, C438S665000, C438S628000

Reexamination Certificate

active

06977213

ABSTRACT:
Disclosed herein are a method of manufacturing a solder bump on a semiconductor device, a solder bump structure formed on a substrate, and an intermediate solder bump structure. In one embodiment, the method includes creating a bonding pad over a semiconductor substrate, and placing a mask layer over the substrate and the bonding pad. The method also includes forming an opening in the mask layer having a primary solder mold and at least one secondary solder mold joined with the primary mold, where the opening exposes a portion of the bonding pad. In this embodiment, the method further includes filling the primary solder mold and the at least one secondary solder mold with solder material to form corresponding primary and at least one secondary solder columns in electrical contact with the bonding pad. The method also includes removing the mask layer after the filling of the solder molds with the solder material. The method still further includes reflowing the solder material to form a primary solder bump from the solder material of the primary solder column and at least a portion of the solder material from the at least one secondary solder column through cohesion of the solder material from the at least one secondary solder column to the primary solder column when melted.

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