I/O driver design for simultaneous switching noise minimization

Details I/O driver design for simultaneous switching noise minimization I/O driver design for simultaneous switching noise minimization

1996-11-13

1998-12-01

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438133, 438210, 438238, 438307, H01L 218238

Patent

active

058438130

ABSTRACT:
VLSI I/O structures to reduce the effects of simultaneous switching noise (SSN) on output driver circuits and enhance electrostatic discharge immunity, while reducing chip area, in both input receiver circuits and output driver circuits include improved transistors having deep-junction drain and a multi-cascaded, resistive deep-junction source structure.

REFERENCES:
patent: 5030581 (1991-07-01), Yakushiji et al.
patent: 5134088 (1992-07-01), Zetterlund
patent: 5182220 (1993-01-01), Ker et al.
patent: 5225702 (1993-07-01), Chatterjee
patent: 5246872 (1993-09-01), Mortensen
patent: 5343053 (1994-08-01), Avery
patent: 5346835 (1994-09-01), Malhi et al.
patent: 5369041 (1994-11-01), Duvvury
patent: 5430595 (1995-07-01), Wagner et al.

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