Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-02-21
2006-02-21
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S714000, C438S738000
Reexamination Certificate
active
07001848
ABSTRACT:
Another embodiment of the instant invention is a method of fabricating a conductive interconnect for providing an electrical connection between a first conductor and a second conductor for an electrical device formed in a semiconductor substrate, the method comprising the steps of: forming a dielectric layer (layer226of FIG.2a) on the first conductor (conductor222of FIG.2a), the dielectric layer having at least one opening which exposes the first conductor; forming a layer of an oxygen-sensitive material (layer234of FIG.2d) on the dielectric layer, the oxygen-sensitive material substantially filling the opening in the dielectric layer and for providing an electrical contact to the first conductor; forming a photoresist layer on the oxygen-sensitive material, the photoresist layer having a pattern so as to expose portions of the oxygen-sensitive material; removing the exposed portions of the oxygen-sensitive material on the dielectric material, the removal step causing a residue to be formed on exposed surfaces of the remaining portions of the oxygen-sensitive material; and removing the photoresist layer by subjecting the photoresist layer with a hydrogen-containing gas incorporated into a plasma.
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Edited by Dennis M. Manos and Daniel L. Flamm, “Plasma Etching An Introduction” 1988, Academic Press, Inc., pp. 18-21, 66-69 and 346-349.
Aldrich David B.
Russell Stephen W.
Smith Patricia B.
Brady III W. James
Fourson George
Maldonado Julio
McLarty Peter K.
Telecky , Jr. Frederick J.
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