Hydrogen assisted undoped silicon oxide deposition process...

Coating apparatus – Gas or vapor deposition

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C118S7230AN

Reexamination Certificate

active

06929700

ABSTRACT:
A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×1011ions/cm3from the process gas to deposit the silicon oxide layer over the substrate.

REFERENCES:
patent: 4572841 (1986-02-01), Kaganowicz et al.
patent: 4690746 (1987-09-01), McInerney et al.
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4890575 (1990-01-01), Ito et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4960488 (1990-10-01), Law et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5089442 (1992-02-01), Olmer
patent: 5156881 (1992-10-01), Okano et al.
patent: 5204141 (1993-04-01), Roberts et al.
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5279865 (1994-01-01), Chebi et al.
patent: 5302233 (1994-04-01), Kim et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5362526 (1994-11-01), Wang et al.
patent: 5416048 (1995-05-01), Blalock et al.
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5507881 (1996-04-01), Sichanugrist et al.
patent: 5525550 (1996-06-01), Kato
patent: 5571576 (1996-11-01), Qian et al.
patent: 5589233 (1996-12-01), Law et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5599740 (1997-02-01), Jang et al.
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5621241 (1997-04-01), Jain
patent: 5624582 (1997-04-01), Cain
patent: 5629043 (1997-05-01), Inaba et al.
patent: 5645645 (1997-07-01), Zhang et al.
patent: 5679606 (1997-10-01), Wang et al.
patent: 5710079 (1998-01-01), Sukharev
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5719085 (1998-02-01), Moon et al.
patent: 5776557 (1998-07-01), Okano et al.
patent: 5786039 (1998-07-01), Brouquet
patent: 5804259 (1998-09-01), Robles
patent: 5807785 (1998-09-01), Ravi
patent: 5849455 (1998-12-01), Ueda et al.
patent: 5850105 (1998-12-01), Dawson et al.
patent: 5858876 (1999-01-01), Chew
patent: 5869149 (1999-02-01), Denison et al.
patent: 5872052 (1999-02-01), Iyer
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5874350 (1999-02-01), Nakagawa
patent: 5903106 (1999-05-01), Young et al.
patent: 5910342 (1999-06-01), Hirooka et al.
patent: 5913140 (1999-06-01), Roche et al.
patent: 5915190 (1999-06-01), Pirkle
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 5953635 (1999-09-01), Andideh
patent: 5968610 (1999-10-01), Liu et al.
patent: 5976327 (1999-11-01), Tanaka
patent: 5990000 (1999-11-01), Hong et al.
patent: 5990013 (1999-11-01), Berenguer et al.
patent: 6013191 (2000-01-01), Nasser-Faili et al.
patent: 6013584 (2000-01-01), M'Saad
patent: 6030666 (2000-02-01), Lam et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6037018 (2000-03-01), Jang et al.
patent: 6039851 (2000-03-01), Iyer
patent: 6042901 (2000-03-01), Denison et al.
patent: 6059643 (2000-05-01), Hu et al.
patent: 6070551 (2000-06-01), Li et al.
patent: 6071573 (2000-06-01), Koemtzopoulos et al.
patent: 6074959 (2000-06-01), Wang et al.
patent: 6077786 (2000-06-01), Chakravarti et al.
patent: 6096646 (2000-08-01), Lee et al.
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6149976 (2000-11-01), Matsuki et al.
patent: 6149986 (2000-11-01), Shibata et al.
patent: 6167834 (2001-01-01), Wang et al.
patent: 6170428 (2001-01-01), Redeker et al.
patent: 6174808 (2001-01-01), Jang et al.
patent: 6182602 (2001-02-01), Redeker et al.
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6189483 (2001-02-01), Ishikawa et al.
patent: 6190233 (2001-02-01), Hong et al.
patent: 6191026 (2001-02-01), Rana et al.
patent: 6194037 (2001-02-01), Terasaki et al.
patent: 6194038 (2001-02-01), Rossman
patent: 6197705 (2001-03-01), Vassiliev
patent: 6200412 (2001-03-01), Kilgore et al.
patent: 6203863 (2001-03-01), Liu et al.
patent: 6217658 (2001-04-01), Orczyk et al.
patent: 6224950 (2001-05-01), Hirata
patent: 6228751 (2001-05-01), Yamazaki et al.
patent: 6230650 (2001-05-01), Yamazaki
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 6313010 (2001-11-01), Nag et al.
patent: 6326064 (2001-12-01), Denison et al.
patent: 6335288 (2002-01-01), Kwan et al.
patent: 6346302 (2002-02-01), Kishimoto et al.
patent: 6372291 (2002-04-01), Hua et al.
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 6416823 (2002-07-01), Li et al.
patent: 6465044 (2002-10-01), Jain et al.
patent: 6503843 (2003-01-01), Xia et al.
patent: 6531193 (2003-03-01), Fonash et al.
patent: 6537929 (2003-03-01), Cheung et al.
patent: 6559026 (2003-05-01), Rossman et al.
patent: 6589610 (2003-07-01), Li et al.
patent: 6589611 (2003-07-01), Li et al.
patent: 6596653 (2003-07-01), Tan et al.
patent: 6596654 (2003-07-01), Bayman et al.
patent: 6607983 (2003-08-01), Chun et al.
patent: 6626188 (2003-09-01), Fitzsimmons et al.
patent: 6653203 (2003-11-01), Huang et al.
patent: 6673722 (2004-01-01), Yamazaki
patent: 6713390 (2004-03-01), M'Saad et al.
patent: 2001/0028924 (2001-10-01), Sherman
patent: 2001/0033900 (2001-10-01), M'Saad et al.
patent: 2002/0187655 (2002-12-01), Tan
patent: 2002/0192396 (2002-12-01), Wang et al.
patent: 2003/0056900 (2003-03-01), Li et al.
patent: 2003/0203637 (2003-10-01), Hua et al.
patent: 2003/0219540 (2003-11-01), Law et al.
patent: 2004/0146661 (2004-07-01), Kapoor et al.
patent: 0883166 (1998-12-01), None
patent: 2 267 291 (1993-12-01), None
patent: 2-58836 (1990-02-01), None
patent: 7-161703 (1995-06-01), None
Abraham, “Reactive Facet Tapering of Plasma Oxide For Multilevel Interconnect Applications,” VMIC Conference. pp. 115-121 (1987).
Alonso, J.C. et al., “High rate-low temperature deposition of silicon dioxide films . . . ” JVST A 13(6) Nov./Dec. 1995, pp. 2924-2929.
Bar-Ilan et al., “A comparative study of sub-micron gap filing and planarization techniques”, SPIE vol. 2636, Oct. 1995, 277-288.
Broomfield et al., “HDP Dielectric BEOL Gapfill: A Process for Manufacturing”, IEEE/SEMI Advanced Semiconductor Manufacturing Conference 1996, pp. 255-258.
Conti et al., “Processing methods to fill High aspect ratio gaps without premature constriction,” DUMIC Conference, Feb. 8-9, 1999, pp. 201-209.
Horlike et al., “High rate and highly selective Si02 etching employing inductively coupled plasma and discussion on reaction kinetics”, JVST A 13(3) May/Jun. 1995, pp. 801-809.
Kuo et al., “Thick SiO2 films obtained by plasma-enhanced chemical vapor deposition using hexamethyldisilazane, Carbon dioxide and hydrogen”, Journal of The Electrochemical Society, 147 (7) 2000 P. 2679-2684.
Lee et al., “Dielectric Planarization Techniques For Narrow Pitch Multilevel Interconnects,” VMIC Conference, pp. 85-92 (1987).
Lee et al., “Low Temperature Silicon Nitride and silicon Dioxide Film . . . ” JECS; 147 (4) 2000, pp. 1481-1486.
Lim et al., “Gap-fill Performance and Film properties of PMD Films for the 65 nm device Technology”, IEEE International Symposium on Semiconductor Manufacturing, Sep. 30-Oct. 2, 2003, p. 435-438.
Meeks et al., “Modeling of SiO 2 deposition in high density plasma reactors and comparisons of model predictions with experimental measurements,” J. Vac

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Hydrogen assisted undoped silicon oxide deposition process... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hydrogen assisted undoped silicon oxide deposition process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hydrogen assisted undoped silicon oxide deposition process... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3439343

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.