Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-19
2008-10-07
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S761000, C438S763000, C438S778000
Reexamination Certificate
active
07432201
ABSTRACT:
A method for making a film stack containing one or more silicon-containing layers and one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes one or more transfer chambers coupled to one or more load lock chambers and two or more different types of process chambers. The two or more types of process chambers are used to deposit the one or more silicon-containing layers and the one or more metal-containing layers in the same substrate processing system without breaking the vacuum, taking the substrate out of the substrate processing system to prevent surface contamination, oxidation, etc., such that additional cleaning or surface treatment steps can be eliminated. The substrate processing system is configured to provide high throughput and compact footprint for in-situ substrate processing and carry out different types of processes.
REFERENCES:
patent: 6287430 (2001-09-01), Matsumoto et al.
patent: 6688375 (2004-02-01), Turner et al.
patent: 2001/0015074 (2001-08-01), Hosokawa
patent: 2002/0170671 (2002-11-01), Matsushita et al.
patent: 2005/0205870 (2005-09-01), Yamazaki
patent: 05-109655 (1993-04-01), None
patent: 05-287530 (1993-11-01), None
patent: 10-098085 (1998-04-01), None
patent: 11-145084 (1999-05-01), None
patent: 2002-158090 (2002-05-01), None
patent: 2003-027234 (2003-01-01), None
patent: 2004-342455 (2004-12-01), None
patent: 10-0297971 (2001-08-01), None
patent: 2003-0047581 (2003-06-01), None
patent: 10-2005-0038121 (2005-04-01), None
Sun Sheng
Takehara Takako
White John M.
Applied Materials Inc.
Nguyen Thanh
Patterson & Sheridan LLP
LandOfFree
Hybrid PVD-CVD system does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hybrid PVD-CVD system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid PVD-CVD system will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4018290