Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-07
2011-06-07
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S653000, C257S751000, C257S761000
Reexamination Certificate
active
07955971
ABSTRACT:
A structure and methods of fabricating the structure. The structure comprising: a trench in a dielectric layer; an electrically conductive liner, an electrically conductive core conductor and an electrically conductive fill material filling voids between said liner and said core conductor.
REFERENCES:
patent: 4707391 (1987-11-01), Hoffmann, Sr.
patent: 4948431 (1990-08-01), Strickland et al.
patent: 5298099 (1994-03-01), Hoffmann, Sr.
patent: 6030298 (2000-02-01), Tate
patent: 6050905 (2000-04-01), Tate
patent: 6143095 (2000-11-01), Kim et al.
patent: 6231949 (2001-05-01), Hoffmann, Sr.
patent: 6627292 (2003-09-01), Hoffmann, Sr.
patent: 6887836 (2005-05-01), Majeti et al.
patent: 7069830 (2006-07-01), Meyer
patent: 7220454 (2007-05-01), Barron et al.
patent: 7273048 (2007-09-01), Zuzelo
patent: 7553757 (2009-06-01), Matsumori
patent: 2003/0069668 (2003-04-01), Zurn
patent: 2004/0236424 (2004-11-01), Berez et al.
patent: 2005/0131128 (2005-06-01), Hughes et al.
patent: 2005/0234461 (2005-10-01), Burdulis et al.
patent: 2005/0267584 (2005-12-01), Burdulis et al.
patent: 2006/0234497 (2006-10-01), Yang et al.
patent: 2007/0179608 (2007-08-01), Ek et al.
patent: 2007/0198022 (2007-08-01), Lang et al.
patent: 2007/0205482 (2007-09-01), Yang et al.
patent: 2007/0250169 (2007-10-01), Lang
patent: 2008/0026568 (2008-01-01), Standaert et al.
Chanda Kaushik
Edelstein Daniel
Li Baozhen
Yang Chih-Chao
Brown Katherine S.
International Business Machines - Corporation
Novacek Christy L
Schmeiser Olsen & Watts
Smith Zandra
LandOfFree
Hybrid metallic wire and methods of fabricating same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hybrid metallic wire and methods of fabricating same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid metallic wire and methods of fabricating same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2710174