Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-28
2010-06-29
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S338000, C257S357000, C257S364000, C257S371000, C257S384000, C257S377000, C257SE29001
Reexamination Certificate
active
07745890
ABSTRACT:
A semiconductor device and system for a hybrid metal fully silicided (FUSI) gate structure is disclosed. The semiconductor system comprises a PMOS gate structure, the PMOS gate structure including a first high-κ dielectric layer, a P-metal layer, a mid-gap metal layer, wherein the mid-gap metal layer is formed between the high-κ dielectric layer, the P-metal layer and a fully silicided layer formed on the P-metal layer. The semiconductor system further comprises an NMOS gate structure, the NMOS gate structure includes a second high-κ dielectric layer, the fully silicided layer, and the mid-gap metal layer, wherein the mid-gap metal layer is formed between the high-κ dielectric and the fully silicided layer.
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Chang Cheng-Hung
Lin Cheng-Tung
Wang Hsiang-Yi
Yeh Chen-Nan
Yu Chen-Hua
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Tran Tan N
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