HSQ with high plasma etching resistance surface for borderless v

Details HSQ with high plasma etching resistance surface for borderless v HSQ with high plasma etching resistance surface for borderless v

1999-06-14

2000-07-04

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438637, 438788, H01L 21318

Patent

active

060838515

ABSTRACT:
HSQ is employed for gap filling patterned metal layers. The surface of the deposited HSQ gap fill layer is modified to decrease its plasma etching rate. Embodiments include modifying the HSQ surface by exposure to a plasma, such as a nitrogen-containing plasma, e.g., a plasma containing ammonia or hydrogen
itrogen, to form a nitrided surface region. Reduction of the plasma etching rate of HSQ enables formation of reliable low resistance borderless vias.

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