Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-13
2007-02-13
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S211000, C438S593000, C257S314000, C257SE29300, C257SE29129, C257SE21680
Reexamination Certificate
active
10870774
ABSTRACT:
An embedded flash cell structure comprising a structure, a first floating gate having an exposed side wall over the structure, a second floating gate having an exposed side wall over the structure and spaced apart from the first floating gate, a first pair of spacers over the respective first floating gate and the second floating gate, a second pair of spacers at least over the respective exposed side walls of the first and second floating gates, a source area in the structure between the second pair of spacers, a plug over the source implant, and first and second control gates outboard of the first pair of spacers and exposing outboard portions of the structure and respective drain areas in the exposed outboard portions of the structure is provided. A method of forming the embedded flash cell structure is also provided.
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Huang Chen-Ming
Shyu Der-Shin
Sung Hung-Cheng
Slater & Matsil L.L.P.
Smith Matthew
Taiwan Semiconductor Manufacturing Company , Ltd.
Tobergte Nicholas J.
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