High voltage transistor with high gated diode breakdown, low bod

Details High voltage transistor with high gated diode breakdown, low bod High voltage transistor with high gated diode breakdown, low bod

1998-10-14

2000-11-07

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438302, 438305, 438298, 438450, 438546, 438291, H01L 21336

Patent

active

061436127

ABSTRACT:
A high voltage transistor exhibiting high gated diode breakdown voltage, low leakage and low body effect is forced while avoiding an excessive number of costly masking steps. Embodiments include providing a high gated diode breakdown voltage by masking the high voltage junctions from the conventional field implant, masking the source/drain regions from the conventional threshold adjust implant, and employing a very lightly doped n-type implant in lieu of conventional n+ and LDD implants. Appropriate openings are formed in the field implant blocking mask so that the field implant occurs at the edges of the junctions, thus achieving low leakage. The field implant blocking mask is extended over the channel area, thereby producing a transistor with low body effect.

REFERENCES:
patent: 4895520 (1990-01-01), Berg
patent: 4994407 (1991-02-01), Custode et al.
patent: 5004701 (1991-04-01), Motokawa
patent: 5091324 (1992-02-01), Hsu et al.
patent: 5518941 (1996-05-01), Lin et al.
patent: 5688706 (1997-11-01), Tseng

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